PART |
Description |
Maker |
EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families x32 Fast Synchronous SRAM 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
GA81032Q-5I GA81032Q-5IT GA81032Q-150 GA81032Q-150 |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Enpirion, Inc. Citizen Finetech Miyota
|
K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM |
8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存) x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
IBM Microeletronics International Business Machines, Corp. Advanced Interconnections, Corp.
|
K7A203200B K7A203600B-QCI14 K7A203200B-QC14 K7A203 |
64Kx36/x32 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
GS88118T-80 GS88118T-80I GS88136T-11.5I GS88118T-1 |
x36 Fast Synchronous SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
IBM0418A81QLAB-4 IBM0418A81QLAB-3 IBM0418A81QLAB-5 |
x36 Fast Synchronous SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
Amphenol, Corp.
|
K7A403609A K7A401809A K7A403609B |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet 128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HM62L36256BP-33 HM62L36256BP-28 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) 16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode) Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100 DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100 0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100 (CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|